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Improvement in lateral IGBT design for 500 V 3 A one chip inverter ICs
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2003
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V 3Electrical EngineeringChip SizeEngineeringChip Inverter IcsPower DeviceChip Size ReductionAdvanced Packaging (Semiconductors)Power IcPower Semiconductor DeviceComputer EngineeringLateral Igbt DesignA Inverter IcsPower InverterPower ElectronicsMicroelectronics
This paper reports, for the first time, the development of 500 V, 3 A single chip inverter ICs. The chip size of the IC is 7.1/spl times/5.2 mm/sup 2/, which is only 30% larger than that of 500 A, 1 A inverter ICs. The chip size reduction has been realized by 35% improvement in lateral IGBT on-resistance and an optimized layout of LIGBT unit cells and bonding pads.