Monte Carlo simulation of two-dimensional hot electrons in n-type Si inversion layers

Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

Frank Stern, W. E. Howard · Physical Review · 1967 · 1.9K citations

Engineering, Materials Engineering, Materials Science +14

Self-Consistent Results for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Si Inversion Layers

Frank Stern · Physical review. B, Solid state · 1972 · 1.2K citations

Engineering, Materials Engineering, Materials Science +17

Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers

F. F. Fang, A. B. Fowler · Journal of Applied Physics · 1970 · 229 citations

Natural Sciences, Materials Science, Physics +17

High-field drift velocity of electrons at the Si–SiO2 interface as determined by a time-of-flight technique

James A. Cooper, D. F. Nelson · Journal of Applied Physics · 1983 · 143 citations

Engineering, Materials Science, Physics +17

Intervalley Scattering Selection Rules for Si and Ge

H. W. Streitwolf · physica status solidi (b) · 1970 · 107 citations

Natural Sciences, Materials Science, Physics +5