Vertical power diodes in bulk GaN

Abstract

Vertical diodes with breakdown voltages up to 2.6kV have been fabricated on bulk GaN substrates. The measured figures-of-merit of these devices show performance near the theoretical limit of GaN. These vertical GaN diodes exhibit robust avalanche behavior with a positive temperature coefficient. System-level performance advantages have been demonstrated in power coversion applications. Statistical data have been collected from thousands of devices. Initial reliability tests have been completed.