Applied Physics Express · 2022 · 14 citations · 28 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesSemiconductor Device MaterialsWide Band Gap SemiconductorsGallium Nitride Light-emitting DiodesLight-emitting DevicesOptical TransmittanceUltraviolet Light-emitting Diodes
Abstract In this study, we enhanced the emission power of AlGaN-based tunnel junction deep-ultraviolet LEDs (TJ LEDs) by using a MgZnO and aluminum stacked structure as UV reflective electrodes on the anode side. The emission wavelength of the fabricated TJ LED was 284 nm, and the emission power was 57.3 mW at 63 A cm −2 . The polycrystalline MgZnO enabled both conductivity and UV transmittance to be achieved, approximately doubling with a reflectance of the fabricated TJ LED at 284 nm compared to conventional TJ LED with Ti/Al. These factors contributed to the increased emission power of TJ LEDs.
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Mg x Zn 1−x O as a II–VI widegap semiconductor alloy
Akira Ohtomo, M. Kawasaki, Takashi Koida et al. · Applied Physics Letters · 1998 · 1.5K citations · Full text
E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical Review Letters · 1980 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +17
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Michael Kneissl, Tae‐Yeon Seong, Jung Han et al. · Nature Photonics · 2019 · 1.3K citations