Lifetime prediction and analysis of AlGaN/GaN HEMT devices under temperature stress

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Gaudenzio Meneghesso, G. Verzellesi, Francesca Danesin et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 642 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Jesús A. del Alamo, Ethan S. Lee · IEEE Transactions on Electron Devices · 2019 · 136 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +16

Temperature Influence on GaN HEMT Equivalent Circuit

Giovanni Crupi, Antonio Raffo, Gustavo Avolio et al. · IEEE Microwave and Wireless Components Letters · 2016 · 73 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

Andrea Natale Tallarico, Steve Stoffels, Niels Posthuma et al. · IEEE Transactions on Electron Devices · 2019 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation on the thermal behavior of microwave GaN HEMTs

Giovanni Crupi, Gustavo Avolio, Antonio Raffo et al. · Solid-State Electronics · 2011 · 39 citations

Engineering, Electrical Engineering, Materials Science +14