Temperature Influence on GaN HEMT Equivalent Circuit

Abstract

The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for high-power and high-temperature applications, the major intrinsic RF figures of merit together with the positive derivative of the real parts of the impedance parameters versus frequency are deeply investigated versus ambient temperature.