Concepedia

Defect reduction in SiC epilayers by different substrate cleaning methods

Daniel Baierhofer, Bernd Thomas, F. Staiger, Barbara Marchetti, Christiane Förster, Tobias Erlbacher

Materials Science in Semiconductor Processing · 2021 · 17 citations · 11 references

DOI

Concepts

References

11

Material science and device physics in SiC technology for high-voltage power devices

Tsunenobu Kimoto · Japanese Journal of Applied Physics · 2015 · 1.1K citations · Full text

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Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology

Werner Kern · Medical Entomology and Zoology · 1970 · 820 citations

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Bulk and epitaxial growth of silicon carbide

Tsunenobu Kimoto · Progress in Crystal Growth and Characterization of Materials · 2016 · 212 citations

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Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization

Bin Chen, Hirofumi Matsuhata, Takashi Sekiguchi et al. · Acta Materialia · 2011 · 60 citations

, , +16

Characterization of the carrot defect in 4H-SiC epitaxial layers

Jawad Ul‐Hassan, Anne Henry, P.J. McNally et al. · Journal of Crystal Growth · 2010 · 55 citations

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