Channel Engineering Assisted Performance Enhancement of Metal Gate Sub-10nm Ballistic SiNWFET for Futuristic Device Applications

Statistics of the Recombinations of Holes and Electrons

W. Shockley, W. T. Read · Physical Review · 1952 · 6.4K citations

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Design of ion-implanted MOSFET's with very small physical dimensions

R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · IEEE Journal of Solid-State Circuits · 1974 · 3.5K citations

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Electron-Hole Recombination in Germanium

R. N. Hall · Physical Review · 1952 · 2.7K citations

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Analysis and simulation of semiconductor devices

S. Selberherr · Mathematics and Computers in Simulation · 1985 · 2.1K citations · Full text

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High dielectric constant oxides

John Robertson · The European Physical Journal Applied Physics · 2004 · 1.8K citations · Full text

Engineering, Electrical Engineering, Materials Science +17