Concepedia

Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC

Fumihiro Fujie, Hongyu Peng, Tuerxun Ailihumaer, Balaji Raghothamachar, Michael Dudley, Shunta Harada, Miho Tagawa, Toru Ujihara

Acta Materialia · 2021 · 24 citations · 32 references

DOI

Concepts

References

32

Material science and device physics in SiC technology for high-voltage power devices

Tsunenobu Kimoto · Japanese Journal of Applied Physics · 2015 · 1.1K citations · Full text

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Degradation of hexagonal silicon-carbide-based bipolar devices

Marek Skowroński, S. Ha · Journal of Applied Physics · 2006 · 466 citations

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Springer Handbook of Crystal Growth

Japanese Magazine of Mineralogical and Petrological Sciences · 2010 · 251 citations · Full text

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Dislocation conversion in 4H silicon carbide epitaxy

S. Ha, P. Mieszkowski, Marek Skowroński et al. · Journal of Crystal Growth · 2002 · 238 citations

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Recombination-enhanced extension of stacking faults in 4H-SiC <i>p-i-n</i> diodes under forward bias

Augustinas Galeckas, Jan Linnros, P. Pirouz · Applied Physics Letters · 2002 · 206 citations

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