Gamma-Ray-Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories

Abstract

This article analyzes the data corruption pattern in the shared pages of multi-level cell (MLC) 3-D NAND memory under ionizing radiation from a Co-60 gamma-ray source for up to 20 krad(Si) dose. The results show that the radiation-induced error pattern between the shared pages follows a unique correlated behavior. We also find that the error locations within a given page remain uncorrelated, meaning that the occurrence of an error does not force a cluster of errors under ionizing radiation.