Investigation of tied double gate 4H–SiC junctionless FET in 7 nm channel length with a symmetrical dual p+ layer

Junctionless multigate field-effect transistor

Chi‐Woo Lee, Aryan Afzalian, Nima Dehdashti Akhavan et al. · Applied Physics Letters · 2009 · 925 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors

Sung‐Jin Choi, Dong‐Il Moon, Sungho Kim et al. · IEEE Electron Device Letters · 2010 · 346 citations

Engineering, Electrical Engineering, Materials Science +16

Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors

Juan Pablo Duarte, Sung‐Jin Choi, Dong‐Il Moon et al. · IEEE Electron Device Letters · 2011 · 184 citations

Engineering, Electrical Engineering, Electronic Materials +16

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

Farzan Jazaeri, Lucian Barbut, A. Koukab et al. · Solid-State Electronics · 2013 · 142 citations · Full text

Engineering, Electrical Engineering, Physics +14

Enhancement‐Mode <i>β</i>‐Ga₂O₃ Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

Yuanjie Lv, Xingye Zhou, Shibing Long et al. · physica status solidi (RRL) - Rapid Research Letters · 2019 · 79 citations

Engineering, Electrical Engineering, Materials Science +17