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Identification of the Γ5 and Γ6 free excitons in GaN

D. C. Reynolds, D. C. Look, B. Jogai, A. Saxler, S. S. Park, Jungsuk Hahn

Applied Physics Letters · 2000 · 44 citations · 7 references

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Abstract

The Γ5 and Γ6 free excitons have been identified in GaN from emission measurements. Another emission peak is also observed which we believe to be the longitudinal free exciton. These measurements along with electrical measurements, which show the sample to have very high peak mobility, attest to the high quality of the sample.

References

7

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.7K citations

, , +14

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

, , +13

GaN: Processing, defects, and devices

S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations

, , +11

Fine Structure and Magneto-Optic Effects in the Exciton Spectrum of Cadmium Sulfide

J. J. Hopfield, D. G. Thomas · Physical Review · 1961 · 503 citations

, , +21

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

D. C. Look, R. J. Molnar · Applied Physics Letters · 1997 · 360 citations

, , +10