Bipolar device fabrication using a scanning tunnelling microscope

Device scaling limits of Si MOSFETs and their application dependencies

D.J. Frank, R.H. Dennard, E. Nowak et al. · Proceedings of the IEEE · 2001 · 1.5K citations

Engineering, Tunneling Currents, Computer Architecture +16

A single-atom transistor

Martin Fuechsle, Jill A. Miwa, Suddhasatta Mahapatra et al. · Nature Nanotechnology · 2012 · 844 citations

Quantum Science, Engineering, Physics +5

Storing quantum information for 30 seconds in a nanoelectronic device

Juha T. Muhonen, Juan Pablo Dehollain, Arne Laucht et al. · Nature Nanotechnology · 2014 · 642 citations · Full text

Photonics, Quantum Science, Engineering +9

Atomically Precise Placement of Single Dopants in Si

Steven R. Schofield, Neil J. Curson, M. Y. Simmons et al. · Physical Review Letters · 2003 · 397 citations · Full text

Engineering, Controlled Incorporation, Chemistry +17

Controlled nanoscale doping of semiconductors via molecular monolayers

Johnny C. Ho, Roie Yerushalmi, Zachery A. Jacobson et al. · Nature Materials · 2007 · 352 citations

Semiconductors, Engineering, Nanotechnology +5