Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN₂ Using the Metathesis Reaction under High Pressure

Abstract

Novel ternary nitride semiconductor MgSnN 2 was synthesized using the metathesis reaction under high pressure ( P = 5.5 GPa/ T = 850 °C/1 h). MgSnN 2 obtained in this study showed a rocksalt structure, although we have reported that ZnSnN 2 synthesized using a similar method has a wurtzite structure. The (111) plane of MgSnN 2 with a rocksalt structure is expected to match well with GaN (0001). The band gap of MgSnN 2 is estimated to be 2.3 eV and it shows a distinct cathodoluminescence peak at room temperature. MgSnN 2 can find potential use in photovoltaic absorber, in the emitting layer of a light‐emitting device, and photocatalyst or opaque pigment because the elements composing MgSnN 2 are nontoxic and earth‐abundant. MgSnN 2 powder synthesized in this study showed excellent crystallinity, proving that metathesis reaction under high pressure is a superior method for synthesizing novel multicomponent nitrides.