Extraction of Mobility in 3-D NAND Flash Memory with Poly-Si Based Macaroni Structure

Abstract

In this paper, mobility model for poly-Si based macaroni structure in 3-D NAND Flash memory is presented. String current was calibrated with technology computer-aided design (TCAD) simulation at room temperature (25°C) with U-shaped trap distribution. Then, unit word line (WL) I-V curve was extracted, and effective mobility was extracted from these data using analytical equation. Mobility model is based on Meyer-Neldel Rule (MNR). We extracted grain boundary barrier height <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\varphi_{\mathrm{b}})$</tex> and fitted with our model. Finally, we fitted effective mobility <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mu_{\mathrm{eff}})$</tex> with our model and fitted string current with SPICE simulation.