Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs

Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance

Jianjing Wang, Henry Shu-Hung Chung, River Tin-Ho Li · IEEE Transactions on Power Electronics · 2012 · 525 citations

Engineering, Electrical Engineering, Microelectronics +16

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Helong Li, Stig Munk‐Nielsen, Xiongfei Wang et al. · IEEE Transactions on Power Electronics · 2015 · 288 citations · Full text

Engineering, Electrical Engineering, Microelectronics +15

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

Ty McNutt, Allen R. Hefner, H. Alan Mantooth et al. · IEEE Transactions on Power Electronics · 2007 · 246 citations

Engineering, Electrical Engineering, Microelectronics +16

Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications

Gangyao Wang, John Mookken, Julius Rice et al. · 2014 · 146 citations

Engineering, Electrical Engineering, Microelectronics +16

Challenges Regarding Parallel Connection of SiC JFETs

Dimosthenis Peftitsis, Roman Baburske, Jacek Rąbkowski et al. · IEEE Transactions on Power Electronics · 2012 · 121 citations

Engineering, Electrical Engineering, Materials Science +16