1.4kV Planar Gate Superjunction IGBT with Stepped Doping Profile in Drift and Collector Region

Theory of Semiconductor Superjunction Devices

Tatsuhiko Fujihira · Japanese Journal of Applied Physics · 1997 · 541 citations

Engineering, Electrical Engineering, Materials Science +17

Superjunction Power Devices, History, Development, and Future Prospects

Florin Udrea, Gerald Deboy, Tatsuhiko Fujihira · IEEE Transactions on Electron Devices · 2017 · 386 citations

Engineering, Electrical Engineering, Physics +14

IGBT History, State-of-the-Art, and Future Prospects

Noriyuki Iwamuro, T. Laska · IEEE Transactions on Electron Devices · 2017 · 357 citations

Engineering, Electrical Engineering, Materials Science +17

Power losses in PWM-VSI inverter using NPT or PT IGBT devices

Frede Blaabjerg, U. Jaeger, Stig Munk‐Nielsen · IEEE Transactions on Power Electronics · 1995 · 282 citations

Engineering, Electrical Engineering, Circuit Theory +15

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

B. Jayant Baliga, M.S. Adler, R.P. Love et al. · IEEE Transactions on Electron Devices · 1984 · 238 citations

Engineering, Electrical Engineering, Microelectronics +13