Publication | Closed Access

Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system

Materials ScienceMaterials EngineeringElectrical EngineeringAluminium NitrideEngineeringNanoelectronicsSimultaneous FormationApplied PhysicsN-type Ohmic ContactsPower Semiconductor DeviceStructural CeramicTernary Ni/ti/al SystemCarbide