Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system

High-temperature ohmic contact to <i>n</i>-type 6H-SiC using nickel

J. Crofton, P.G. McMullin, John R. Williams et al. · Journal of Applied Physics · 1995 · 194 citations

Materials Engineering, Materials Science, Electrical Engineering +15

The Physics of Ohmic Contacts to SiC

J. Crofton, Lisa M. Porter, John R. Williams · physica status solidi (b) · 1997 · 193 citations

Materials Science, Semiconductor Technology, Electrical Engineering +9

Contact resistance measurements on <i>p</i>-type 6H-SiC

J. Crofton, P. A. Barnes, John R. Williams et al. · Applied Physics Letters · 1993 · 123 citations

Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC

Ryohei Konishi, Ryuichi Yasukochi, Osamu Nakatsuka et al. · Materials Science and Engineering B · 2003 · 95 citations

Materials Science, Materials Engineering, Electrical Engineering +5

Titanium and aluminum-titanium ohmic contacts to p-type SiC

J. Crofton, L.M. Beyer, John R. Williams et al. · Solid-State Electronics · 1997 · 87 citations

Materials Engineering, Materials Science, Engineering +4