High-temperature ohmic contact to <i>n</i>-type 6H-SiC using nickel

Abstract

Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 °C and yielded values &amp;lt;5×10−6 Ω cm2 at both temperatures. The trend shows a decreasing contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer.