Optical properties evolution of GaN film grown via lateral epitaxial overgrowth

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 732 citations

Engineering, Electrical Engineering, Materials Science +17

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

Rosa Chierchia, T. Böttcher, H. Heinke et al. · Journal of Applied Physics · 2003 · 391 citations

Natural Sciences, Materials Engineering, Materials Science +17

Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy

Kazumasa Hiramatsu · Japanese Journal of Applied Physics · 1993 · 232 citations

Engineering, Materials Engineering, Materials Science +17

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Samantha C. Cruz, S. Keller, Thomas E. Mates et al. · Journal of Crystal Growth · 2009 · 224 citations

Natural Sciences, Materials Engineering, Materials Science +17

InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

Takashi Mukai, Kazunori Takekawa, Shuji Nakamura · Japanese Journal of Applied Physics · 1998 · 203 citations

Engineering, Electrical Engineering, Materials Science +17