Improvement of Ti/Al ohmic contacts on N-face n-type GaN by using O2 plasma treatment

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Shuji Nakamura · Science · 1998 · 1.9K citations

Engineering, Electrical Engineering, Materials Science +17

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Tetsuya Takeuchi, Shigetoshi Sota, Maki Katsuragawa et al. · Japanese Journal of Applied Physics · 1997 · 1.2K citations

Natural Sciences, Materials Engineering, Materials Science +17

High-power InGaN/GaN double-heterostructure violet light emitting diodes

Shuji Nakamura, Masayuki Senoh, Takashi Mukai · Applied Physics Letters · 1993 · 660 citations

Engineering, Electrical Engineering, Materials Science +16

Low resistance ohmic contacts on wide band-gap GaN

Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 438 citations

Engineering, Materials Engineering, Materials Science +17

High performance thin-film flip-chip InGaN–GaN light-emitting diodes

O.B. Shchekin, J. E. Epler, T. A. Trottier et al. · Applied Physics Letters · 2006 · 335 citations

Engineering, Electrical Engineering, Materials Science +17