Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device

Resistive switching in transition metal oxides

Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Reproducible resistance switching in polycrystalline NiO films

Sunae Seo, Myoung‐Jae Lee, David H. Seo et al. · Applied Physics Letters · 2004 · 934 citations

Natural Sciences, Materials Engineering, Materials Science +16

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Ee Wah Lim, Razali Ismail · Electronics · 2015 · 795 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · Applied Physics Letters · 2008 · 270 citations

Engineering, Electrical Engineering, Materials Science +13

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

Qi Liu, Shibing Long, Wei Wang et al. · IEEE Electron Device Letters · 2009 · 216 citations

Engineering, Materials Engineering, Materials Science +15