A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes

Abstract

We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on}}$ </tex-math></inline-formula> )/off-current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ off}}$ </tex-math></inline-formula> ) ratio reaches very high value of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 10^{8}$ </tex-math></inline-formula> at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ ds}}= - 0.5$ </tex-math></inline-formula> V with a smaller tunneling junction width at the drain. The innovative T-shape design allows integration of both TFET and metal-oxide semiconductor field-effect transistors (MOSFET) operation modes in one structure. Both TFET and MOSFET operation modes are experimentally demonstrated in this device structure, which provide the implementation of the selector function with the single device.