Tunnel Field-Effect Transistors: State-of-the-Art

TLDR

The authors propose a common approach to TFET characterization to facilitate future comparisons. The review compares experimental results and theoretical predictions against 16‑nm FinFET CMOS technology and proposes a common approach to TFET characterization. Experiments lag projections, yet 14 TFETs have reported sub‑threshold swings below 60 mV/decade, with the lowest measured swing approaching 20 mV/decade (though based on few points) and the highest current achieving such a swing in the 1–10 nA/µm range.

Abstract

Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by comparing experimental results and theoretical predictions against 16-nm FinFET CMOS technology. Experiments lag the projections, but sub-threshold swings less than 60 mV/decade are now reported in 14 TFETs. The lowest measured sub-threshold swings approaches 20 mV/decade, however, the measurements at these lowest values are not based on many points. The highest current at which sub-threshold swing below 60 mV/decade is observed is in the range 1-10 nA/μm. A common approach to TFET characterization is proposed to facilitate future comparisons.