IET Circuits Devices & Systems · 2019 · 41 citations · 17 references
EngineeringElectrical EngineeringMaterials EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDielectricsField-effect TransistorsNanoelectronicsNanotubesSemiconductor Device MaterialsShort-channel EffectsBand Gap EnergyChannel EngineeringDoping ControlEnergy Band GapGate Dielectric EngineeringHigh-dielectric-constant MaterialsTunneling Field-effect Transistors
A new tubular field effect transistor (FET) device named silicon nanotube tunnel field effect transistor (Si‐NTTFET) has been proposed which is emerged out of structural engineering and the gate dielectric engineering. The proposed structure offers better immunity towards short channel effects (SCEs) because of the combined effect of minimal doping at the drain side and control of channel region due to the double gate. The tunnelling probability is also improved due to narrow energy band variation. The high k dielectric material such as enhances the ON current by a factor of 3 and 14 as compared to and gate dielectric, respectively.
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