Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment

Abstract

measurements. The electrolysis of water caused by the tip electric field and electrical abnormalities caused by hydrogen diffusion into the a-IGZO active layer are explained by this model. A secondary-ion mass spectrometry analysis shows that hydrogen content in the channel generally increases under NBS in ambient moisture. The degradation behavior due to moisture in a-IGZO is clarified. Thus, inhibiting the tip electric field may benefit future flexible-display and gas-sensing applications.