Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, +3

Nature

Materials ScienceRoom-temperature FabricationElectrical EngineeringEngineeringFlexible Electronics +6

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, +3

Science

Electrical EngineeringEngineeringNanoelectronicsOxide ElectronicsCompound Semiconductor +12

ZnO-based transparent thin-film transistors

Randy Hoffman, B. Norris, John F. Wager

Applied Physics Letters

Electrical EngineeringElectronic DevicesOptical MaterialsElectronic MaterialsZno Band Gap +13

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Hisato Yabuta, Masafumi Sano, Katsumi Abe, +6

Applied Physics Letters

EngineeringThin Film Process TechnologyAmorphous Ingazno4 ChannelSemiconductor DeviceSemiconductors +15

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

P. F. Carcia, R. Scott McLean, Michael H. Reilly, +1

Applied Physics Letters

Thin Film PhysicsEngineeringThin Film Process TechnologySemiconductor DeviceElectronic Devices +16

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

Jae Kyeong Jeong, Hui Yang, Jong Han Jeong, +2

Applied Physics Letters

Electrical EngineeringEngineeringNanoelectronicsStress-induced Leakage CurrentSurface Science +9

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Hai Q. Chiang, John F. Wager, Randy Hoffman, +2

Applied Physics Letters

Materials ScienceElectrical EngineeringSemiconductor DeviceEngineeringElectronic Materials +12

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

Kenji Nomura, Akihiro Takagi, Toshio Kamiya, +3

Japanese Journal of Applied Physics

Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering +11

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

Toshio Kamiya, Kenji Nomura, Hideo Hosono

Journal of Display Technology

EngineeringSemiconductor MaterialsThin Film Process TechnologySemiconductor DeviceSemiconductors +17

Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

Satoshi Masuda, Ken Kitamura, Yoshihiro Okumura, +3

Journal of Applied Physics

Optical MaterialsVisible LightEngineeringZno LayersOptoelectronic Devices +14