Direct bonding of LiNbO3 and SiC wafers at room temperature

Plasma-assisted InP-to-Si low temperature wafer bonding

D. M. Pasquariello, Klas Hjort · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 244 citations

Engineering, Materials Engineering, Materials Science +17

Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

Hideki Takagi, Ryutaro Maeda, Teak Ryong Chung et al. · Japanese Journal of Applied Physics · 1998 · 204 citations

Engineering, Materials Engineering, Materials Science +15

Room-temperature wafer bonding of Si to LiNbO₃, LiTaO₃and Gd₃Ga₅O₁₂by Ar-beam surface activation

Hideki Takagi, Ryutaro Maeda, Tadatomo Suga · Journal of Micromechanics and Microengineering · 2001 · 85 citations

Engineering, Materials Engineering, Materials Science +15

Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers

Eiji Higurashi, Ken-ichi Okumura, Kaori Nakasuji et al. · Japanese Journal of Applied Physics · 2015 · 67 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

Jianbo Liang, Shota Nishida, M. Arai et al. · Applied Physics Letters · 2014 · 54 citations · Full text

Engineering, Electrical Engineering, Materials Science +17