Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding

Jianbo Liang, Li Chai, Shota Nishida, +2

Japanese Journal of Applied Physics

EngineeringSemiconductor MaterialsSi/gaas HeterojunctionsIntegrated CircuitsSilicon On Insulator +19

Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

Jianbo Liang, Shota Nishida, M. Arai, +1

Applied Physics Letters

EngineeringOptoelectronic DevicesIntegrated CircuitsElectrical PropertiesSemiconductor Device +14

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

Jianbo Liang, T. Miyazaki, Masashi Morimoto, +3

Applied Physics Express

EngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductor DeviceSemiconductors +15

Electrical properties of Si/Si interfaces by using surface-activated bonding

Jianbo Liang, T. Miyazaki, M. Morimoto, +2

Journal of Applied Physics

Si/si InterfacesEngineeringBonding InterfacesIntegrated CircuitsSilicon On Insulator +14

Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding

Masashi Morimoto, Jianbo Liang, Shota Nishida, +1

Japanese Journal of Applied Physics

EngineeringIntegrated CircuitsSilicon On InsulatorElectrical PropertiesInterconnect (Integrated Circuits) +17

Effects of interface state charges on the electrical properties of Si/SiC heterojunctions

Jianbo Liang, Shota Nishida, T. Hayashi, +2

Applied Physics Letters

Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +11

Surface-activated-bonding-based InGaP-on-Si double-junction cells

Naoteru Shigekawa, Masashi Morimoto, Shota Nishida, +1

Japanese Journal of Applied Physics

Double-junction CellsElectrical EngineeringEngineeringNanoelectronicsSurface Science +9

Improved electrical properties of <i>n-n</i> and <i>p-n</i> Si/SiC junctions with thermal annealing treatment

Jianbo Liang, Shota Nishida, M. Arai, +1

Journal of Applied Physics

SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering +11

Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions

Jianbo Liang, Shota Nishida, M. Morimoto, +1

Electronics Letters

EngineeringSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaicsInterconnect (Integrated Circuits) +20

Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si

Shota Nishida, Jianbo Liang, T. Hayashi, +2

Japanese Journal of Applied Physics

EngineeringSemiconductor MaterialsElectrical PropertiesSemiconductor DeviceElectronic Devices +15