Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

Abstract

The electrical properties of p-Si/n-GaAs heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by measuring their current–voltage (I–V) and capacitance–voltage (C–V) characteristics. The I–V characteristics showed rectifying properties. Their flat-band voltage obtained from C–V measurements was around 1.6 V. Observation by using field-emission-scanning electron microscopy and energy dispersive X-ray spectroscopy revealed neither structural deficits nor oxide layers at the interfaces. These results suggest that the SAB-based Si/GaAs heterojunctions are applicable for fabricating novel devices.