Masashi Morimoto

Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding

Jianbo Liang, Li Chai, Shota Nishida et al. · Japanese Journal of Applied Physics · 2015 · 60 citations · Full text

Engineering, Semiconductor Materials, Si/gaas Heterojunctions +21

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

Jianbo Liang, T. Miyazaki, Masashi Morimoto et al. · Applied Physics Express · 2013 · 54 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +17

Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding

Masashi Morimoto, Jianbo Liang, Shota Nishida et al. · Japanese Journal of Applied Physics · 2015 · 49 citations · Full text

Engineering, Integrated Circuits, Silicon On Insulator +19

Surface-activated-bonding-based InGaP-on-Si double-junction cells

Naoteru Shigekawa, Masashi Morimoto, Shota Nishida et al. · Japanese Journal of Applied Physics · 2014 · 28 citations

Double-junction Cells, Electrical Engineering, Engineering +11

Band structures of Si/InGaP heterojunctions by using surface‐activated bonding

Jianbo Liang, Masashi Morimoto, Shota Nishida et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 10 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +16