Three dimensional ICs, having four stacked active device layers

T. Kunio, K. Oyama, Y. Hayashi, +1

EngineeringFour-layer-stacked Master SliceIntegrated CircuitsSilicon On InsulatorWafer Scale Processing +17

Electrical properties of Si/Si interfaces by using surface-activated bonding

Jianbo Liang, T. Miyazaki, M. Morimoto, +2

Journal of Applied Physics

Si/si InterfacesEngineeringBonding InterfacesIntegrated CircuitsSilicon On Insulator +14

Catastrophic degradation of GaAlAs DH laser diodes

H. Imai, M. Morimoto, H. Sudo, +2

Applied Physics Letters

Electrical EngineeringOptical MaterialsEngineeringPhotoluminescenceSemiconductor Lasers +12

Accelerated aging test of Ga1−<i>x</i>Al<i>x</i>As DH lasers

H. Ishikawa, Takanori Fujiwara, Koichi Fujiwara, +2

Journal of Applied Physics

Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser Applications +17

Co-Propagating Dual-Order Distributed Raman Amplifier Utilizing Incoherent Pumping

M. Morimoto, Haruki Ogoshi, Junji Yoshida, +3

IEEE Photonics Technology Letters

Optical PumpingPhotonicsEngineeringOptical AmplificationOptical Transmission System +9

SiO2 planarization by two-step rf bias-sputtering

Tohru Mogami, M. Morimoto, Hirofumi Okabayashi, +1

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Rf Bias SputteringEngineeringSilicon On InsulatorWafer Scale ProcessingThin Film Processing +14

Low-resistance MOS technology using self-aligned refractory silicidation

Hirofumi Okabayashi, M. Morimoto, Eiji Nagasawa

IEEE Transactions on Electron Devices

Materials EngineeringMaterials ScienceChemical EngineeringElectrical EngineeringEngineering +13

Mo- and Ti-silicided low-resistance shallow junctions formed using the ion implantation through metal technique

Eiji Nagasawa, Hirofumi Okabayashi, M. Morimoto

IEEE Transactions on Electron Devices

Materials ScienceSemiconductorsElectrical EngineeringDouble Ion ImplantationEngineering +11

Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions

Jianbo Liang, Shota Nishida, M. Morimoto, +1

Electronics Letters

EngineeringSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaicsInterconnect (Integrated Circuits) +20

Accelerated aging test of InGaAsP/InP double-heterostructure laser diodes with single transverse mode

H. Imai, M. Morimoto, Hiroshi Ishikawa, +5

Applied Physics Letters

Semiconductor TechnologyPhotonicsElectrical EngineeringOptical MaterialsSingle Transverse Mode +13