Stability in single longitudinal mode operation in GaInAsP/InP phase-adjusted DFB lasers

H. Soda, Y. Kotaki, H. Sudo, +3

IEEE Journal of Quantum Electronics

Optical MaterialsEngineeringLaser ScienceOptical Transmission SystemLaser Applications +19

An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

T. Akiyama, Mitsuru Ekawa, Mitsuru Sugawara, +5

IEEE Photonics Technology Letters

PhotonicsElectrical EngineeringOptical MaterialsSemiconductor Optical AmplifierOptical Amplification +12

1.28μm lasing from stacked InAs∕GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition

Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, +5

Applied Physics Letters

Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices +15

GaInAsP/InP phase-adjusted distributed feedback lasers with a step-like nonuniform stripe width structure

H. Soda, K. Wakao, H. Sudo, +2

Electronics Letters

PhotonicsEngineeringLaser ScienceFeedback LasersOptical Transmission System +10

In As ∕ Ga As self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots

Jun Tatebayashi, Yasuhiko Arakawa, Nobuaki Hatori, +4

Applied Physics Letters

Materials SciencePhotonicsPostgrowth AnnealingEngineeringNanotechnology +12

Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemicalvapour deposition

Jun Tatebayashi, Nobuaki Hatori, Hideo Kakuma, +6

Electronics Letters

Ground state lasing at 1.34μm from InAs∕GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition

Denis Guimard, Yasuhiko Arakawa, M. Ishida, +6

Applied Physics Letters

Ground State LasingOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices +18

Catastrophic degradation of GaAlAs DH laser diodes

H. Imai, M. Morimoto, H. Sudo, +2

Applied Physics Letters

Electrical EngineeringOptical MaterialsEngineeringPhotoluminescenceSemiconductor Lasers +12

Ultra-High speed InGaAsP/InP DFB lasers emitting at 1.3 µm wavelength

K. Kamite, H. Sudo, M. Yano, +2

IEEE Journal of Quantum Electronics

PhotonicsEngineeringLaser ScienceμM Dfb LaserOptical Properties +7

Interface properties of InAs quantum dots produced by antimony surfactant-mediated growth: Etching of segregated antimony and its impact on the photoluminescence and lasing characteristics

Denis Guimard, Mitsuru Ishida, Lin Li, +7

Applied Physics Letters

Optical MaterialsEngineeringLaser ApplicationsColloidal NanocrystalsOptoelectronic Devices +21