Jun Tatebayashi

Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa · Applied Physics Letters · 2001 · 270 citations

Quantum Photonics, Optical Materials, Engineering +21

Room-temperature lasing in a single nanowire with quantum dots

Jun Tatebayashi, Satoshi Kako, Jinfa Ho et al. · Nature Photonics · 2015 · 182 citations

Engineering, Physics, Quantum Device +5

Size, shape, and strain dependence of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>factor in self-assembled In(Ga)As quantum dots

Toshihiro Nakaoka, Toshio Saito, Jun Tatebayashi et al. · Physical Review B · 2004 · 107 citations

Strain Dependence, Engineering, Semiconductor Nanostructures +18

Low-Threshold near-Infrared GaAs–AlGaAs Core–Shell Nanowire Plasmon Laser

Jinfa Ho, Jun Tatebayashi, Sylvain Sergent et al. · ACS Photonics · 2014 · 102 citations

Optical Materials, Engineering, Laser Applications +18

III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs

Ganesh Balakrishnan, Jun Tatebayashi, Arezou Khoshakhlagh et al. · Applied Physics Letters · 2006 · 93 citations

Materials Science, Ii-vi Semiconductor, Photoluminescence +13