Jun Tatebayashi - Concepedia

Author

Jun Tatebayashi

The University of Tokyo ORCID

Also Known As

J Tatebayashi, J. Tatebayashi, Jun TATEBAYASHI, Jun Tatebayashi, June Tatebayashi, NAUDE_DP, Tatebayashi, Jun

243

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

The University of Tokyo University of New Mexico University of California, Los Angeles Fujitsu (Japan)The University of Osaka

About

Jun Tatebayashi is an author at The University of Tokyo specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	59	2.4K
2	Applied Physics	28	56	2.3K
3	Chemical Engineering	2	2	23
4	Natural Sciences	1	1	53
5	Chemistry	1	1	12

Jun Tatebayashi

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa Applied Physics Letters Quantum PhotonicsOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices	2001	270
Room-temperature lasing in a single nanowire with quantum dots Jun Tatebayashi, Satoshi Kako, Jinfa Ho, Nature Photonics EngineeringPhysicsQuantum DeviceApplied PhysicsQuantum Dots	2015	182
Size, shape, and strain dependence of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>factor in self-assembled In(Ga)As quantum dots Toshihiro Nakaoka, Toshio Saito, Jun Tatebayashi, Physical Review B Strain DependenceEngineeringSemiconductor NanostructuresSemiconductorsMath Xmlns	2004	107
Low-Threshold near-Infrared GaAs–AlGaAs Core–Shell Nanowire Plasmon Laser Jinfa Ho, Jun Tatebayashi, Sylvain Sergent, ACS Photonics Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	2014	102
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs Ganesh Balakrishnan, Jun Tatebayashi, Arezou Khoshakhlagh, Applied Physics Letters Materials ScienceIi-vi SemiconductorPhotoluminescenceEngineeringPhysics	2006	93
A Nanowire-Based Plasmonic Quantum Dot Laser Jinfa Ho, Jun Tatebayashi, Sylvain Sergent, Nano Letters Quantum PhotonicsOptical MaterialsEngineeringQuantum Dot LasersLaser Applications	2016	74
Narrow photoluminescence linewidth (&lt;17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, Applied Physics Letters EngineeringGallium SourceOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2004	62
Lasing characteristics of GaSb∕GaAs self-assembled quantum dots embedded in an InGaAs quantum well Jun Tatebayashi, Arezou Khoshakhlagh, S. Huang, Applied Physics Letters Quantum PhotonicsOptical MaterialsEngineeringOptoelectronic DevicesIngaas Quantum	2007	61
1.28μm lasing from stacked InAs∕GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Applied Physics Letters Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	2005	60
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut Shuhei Ichikawa, Keishi Shiomi, Takaya Morikawa, Applied Physics Express Optical MaterialsEngineeringWide Color GamutOptoelectronic DevicesLight-emitting Diodes	2021	60

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