Masao Nishioka

Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa · Applied Physics Letters · 2001 · 270 citations

Quantum Photonics, Optical Materials, Engineering +21

Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage

Denis Guimard, Ryo Morihara, Damien Bordel et al. · Applied Physics Letters · 2010 · 243 citations

Engineering, Enhanced Photocurrent, Optoelectronic Devices +19

Coupling of quantum-dot light emission with a three-dimensional photonic-crystal nanocavity

K. Aoki, Denis Guimard, Masao Nishioka et al. · Nature Photonics · 2008 · 183 citations

Quantum Science, Photonics, Quantum Optic +10

Recombination lifetime of carriers in GaAs-GaAlAs quantum wells near room temperature

Yasuhiko Arakawa, H. Sakaki, Masao Nishioka et al. · Applied Physics Letters · 1985 · 68 citations

Semiconductors, Room Temperature, Wide-bandgap Semiconductor +13

Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

Tao Yang, Jun Tatebayashi, Shiro Tsukamoto et al. · Applied Physics Letters · 2004 · 62 citations

Engineering, Gallium Source, Optoelectronic Devices +18