Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO ₂ thin films prepared by atomic-layer deposition with different O ₃ doses

Abstract

Abstract Metal–ferroelectric–metal–insulator–semiconductor (MFMIS) capacitors using Al-doped HfO 2 (Al:HfO 2 ) ferroelectrics were proposed and the effects of O 3 doses were investigated. The memory window (MW) increased with increasing the areal ratios of the MIS to the MFM ( S I / S F ) and the largest MW was obtained at the largest S I / S F for both devices prepared with O 3 doses of 3 and 5 s. Contrarily, the retention of the device prepared with O 3 dose of 3 s could be improved compared with the device prepared with longer O 3 doses. Thus, the S I / S F and O 3 doses could be suggested as critical control parameters for the Al:HfO 2 MFMIS capacitors.