So-Jung Yoon

Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal–Ferroelectric–Metal–Insulator–Semiconductor Gate-Stacks Using Al-Doped HfO₂ Thin Films

So-Jung Yoon, Dae-Hong Min, Seung Eon Moon et al. · IEEE Transactions on Electron Devices · 2020 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Polarization switching kinetics of the ferroelectric Al-doped HfO2 thin films prepared by atomic layer deposition with different ozone doses

So-Jung Yoon, So-Yeong Na, Seung Eon Moon et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2019 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +17

Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf_0.5Zr_0.5O₂ thin films controlled by oxygen partial pressures during the sputtering deposition process

Dae-Hong Min, Tae-Hyun Ryu, So-Jung Yoon et al. · Journal of Materials Chemistry C · 2020 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes

Tae-Hyun Ryu, So-Jung Yoon, So-Yeong Na · Current Applied Physics · 2019 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +16

Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO ₂ thin films prepared by atomic-layer deposition with different O ₃ doses

So-Yeong Na, So-Jung Yoon, Seung‐Youl Kang et al. · Japanese Journal of Applied Physics · 2019 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +15