Applied Physics Letters · 2013 · 798 citations · 26 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsCrystal StructureThin FilmsDielectric MaterialsDielectric PropertiesDielectricsFerroelectric MaterialsThin Film AnnealingThin Film Electrical PropertiesAnnealing Time EffectsDielectric ConstantFerroelectric PropertiesFerroelectric Thin FilmsFerroelectricityFilm ThicknessPolarizationThin Film Ferroelectrics
The effects of annealing temperature (Tanneal) and film thickness (tf) on the crystal structure and ferroelectric properties of Hf0.5Zr0.5O2 films were examined. The Hf0.5Zr0.5O2 films consist of tetragonal, orthorhombic, and monoclinic phases. The orthorhombic phase content, which is responsible for the ferroelectricity in this material, is almost independent of Tanneal, but decreases with increasing tf. In contrast, increasing Tanneal and tf monotonically increases (decreases) the amount of monoclinic (tetragonal) phase, which coincides with the variations in the dielectric constant. The remanant polarization was determined by the content of orthorhombic phase as well as the spatial distribution of other phases.
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Ferroelectricity in hafnium oxide thin films
T. S. Böscke, Johannes Müller, D. Bräuhaus et al. · Applied Physics Letters · 2011 · 2.7K citations
Natural Sciences, Materials Engineering, Materials Science +17
Ferroelectricity in Simple Binary ZrO<sub>2</sub> and HfO<sub>2</sub>
Johannes Müller, T. S. Böscke, U. Schröder et al. · Nano Letters · 2012 · 1.7K citations