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Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth

EngineeringPhysicsMeasurementMicrofabricationCalibrationApplied PhysicsEducationInstrumentationSilicon On InsulatorMicroelectronicsPlasma EtchingPlasma Information VariableStatistically-tuned Virtual MetrologyMetrology