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Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory

Materials ScienceElectrical EngineeringEngineeringEmerging Memory TechnologyApplied PhysicsCondensed Matter PhysicsMagnetoresistive Random-access MemoryMemory DeviceMemory DevicesSemiconductor MemoryResistive Random-access MemoryPhase Change MemoryMemory Reliability