Japanese Journal of Applied Physics · 2019 · 19 citations · 27 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor NanomaterialsSemiconductor SurfacesWide-bandgap Semiconductor DevicesDevice FabricationEfficiency DroopElectroluminescenceEtchingGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting DevicesReflectance
Abstract Utilising our novel wafer-scale electrochemical porosification approach which proceeds through the top surface by means of nanoscale vertical etching pathways, we have prepared full 2 inch wafers containing alternating solid GaN and nanoporous GaN (NP-GaN) layers that form distributed Bragg reflectors (DBRs), and have regrown InGaN-based light emitting diode (LED) heterostructures on these wafers. The NP-GaN DBR wafer is epi-ready and exhibits a peak reflectance of 95% at 420 nm prior to growth of the LED heterostructure. We observe a 1.8× enhancement in peak intensity of LED electroluminescence from processed devices, and delayed onset of efficiency droop with increased injection current.
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Siddha Pimputkar, James S. Speck, Steven P. DenBaars et al. · Nature Photonics · 2009 · 2.2K citations
Engineering, Electrical Engineering, Materials Engineering +12
High-Power and High-Efficiency InGaN-Based Light Emitters
A. Laubsch, M. Sabathil, J. Baur et al. · IEEE Transactions on Electron Devices · 2009 · 337 citations