Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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Natural Sciences, Materials Engineering, Materials Science +14

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Feng Pan, Shuang Gao, Chen Chen et al. · Materials Science and Engineering R Reports · 2014 · 1.4K citations

Engineering, Materials Science, Physics +14

VTEAM: A General Model for Voltage-Controlled Memristors

Shahar Kvatinsky, M. Nisvo Ramadan, Eby G. Friedman et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 2015 · 827 citations

Engineering, Computer Engineering, Electrical Engineering +16

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

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Engineering, Electrical Engineering, Materials Science +13

Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity

Sungho Kim, Chao Du, Patrick Sheridan et al. · Nano Letters · 2015 · 588 citations

Engineering, Electrical Engineering, Neural Engineering +16