2018 · 12 citations · 8 references
EngineeringComputer EngineeringElectrical EngineeringAnalog ElectronicsLow-power DesignMicroelectronicsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDynamic Power ReductionLow-power Digital Circuit DesignTransistor BiasingBody BiasingCmos ScalingComparator DesignComparatorsEnergy Loss AnalysisForward Body BiasingLatch DesignThreshold Voltage
In this paper, we propose a forward body biasing technique to enhance the performance of the StrongARM comparators. We apply this technique, which is mainly based on clocked tuning of the threshold voltage of the NMOS cross-coupled transistors, to different architectures, namely: Kobayashi, Razavi, and Improved StrongARM comparators. The circuits are simulated in the standard 65nm CMOS technology and performance improvement of up to 20.8% has been achieved while maintaining the same energy loss.
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