Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

Nature of the 2.8 eV photoluminescence band in Mg doped GaN

U. Kaufmann, M. Kunzer, Matthias Maier et al. · Applied Physics Letters · 1998 · 355 citations

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High internal and external quantum efficiency InGaN/GaN solar cells

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InGaN/GaN multiple quantum well concentrator solar cells

R. Dahal, J. Li, Krishna Aryal et al. · Applied Physics Letters · 2010 · 207 citations · Full text

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Self-compensation in Mg doped p-type GaN grown by MOCVD

H. Obloh, K. H. Bachem, U. Kaufmann et al. · Journal of Crystal Growth · 1998 · 137 citations

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High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

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