InGaN/GaN multiple quantum well concentrator solar cells

Abstract

We present the growth, fabrication, and photovoltaic characteristics of Inx Ga1−xN/GaN(x∼0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.