Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer

Material removal mechanism in chemical mechanical polishing: theory and modeling

Jianfeng Luo, David Dornfeld · IEEE Transactions on Semiconductor Manufacturing · 2001 · 641 citations

Engineering, Materials Engineering, Materials Science +16

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco et al. · Microelectronic Engineering · 2017 · 568 citations

Engineering, Electrical Engineering, Materials Science +14

Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Hajime Okumura · Japanese Journal of Applied Physics · 2006 · 329 citations

Engineering, Electrical Engineering, Materials Science +17

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Hideo Aida, Toshiro Doi, Hidetoshi Takeda et al. · Current Applied Physics · 2012 · 257 citations

Engineering, Materials Engineering, Materials Science +14

Effect of Particle Size of Chemical Mechanical Polishing Slurries for Enhanced Polishing with Minimal Defects

G. Bahar Basim, J. Adler, Uday Mahajan et al. · Journal of The Electrochemical Society · 2000 · 198 citations

Engineering, Chemical Engineering, Materials Science +13