Methodology for enhanced short-circuit capability of SiC MOSFETs

Abstract

It has been demonstrated in many power transform systems that silicon carbide (SiC) MOSFETs with low power loss, high thermal capability are superior candidate to replace the status of silicon power devices. Short-circuit capability is one of most essential robustness issues for the reliability of SiC MOSFETs, which should be carefully considered. In this study, the special failure mechanisms of SiC MOSFETs have been investigated and analyzed by the experimental and numerical analyses during the short-circuit transient. In addition, a robustness enhanced SiC MOSFET with the thick gate oxide of 85nm has been fabricated and been showed the high short-circuit capability even with higher short-circuit energy and longer short-circuit transient.