Concepedia

Enhanced crystalline size of undoped GaN powders obtained by nitridation of metallic gallium

Erick Gastellóu, Crisóforo Morales, Rafael García, Godofredo García, Gustavo A. Hirata, R. Galeazzi, A.M. Herrera, E. Rosendo, Tomás Díaz, J. R. Ramos-Serrano,

Optical Materials · 2018 · 10 citations · 20 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials CharacterizationSemiconductor MaterialsDopingIii-v SemiconductorsMetalsSemiconductor Crystal GrowthSemiconductor Device MaterialsWide-bandgap SemiconductorsCrystalline StructureGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthWide Bandgap Semiconductor Applications

References

20

Luminescence properties of defects in GaN

M. A. Reshchikov, H. Morkoç̌ · Journal of Applied Physics · 2005 · 1.9K citations

Engineering, Materials Engineering, Materials Science +17

Growth and applications of Group III-nitrides

O. Ambacher · Journal of Physics D Applied Physics · 1998 · 1.4K citations

Engineering, Materials Engineering, Materials Science +17

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 809 citations

Engineering, Materials Engineering, Materials Science +12

III-V nitrides for electronic and optoelectronic applications

R. F. Davis · Proceedings of the IEEE · 1991 · 392 citations

Engineering, Materials Engineering, Materials Science +17

First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride

Kazutoshi Miwa, A. Fukumoto · Physical review. B, Condensed matter · 1993 · 252 citations

Natural Sciences, Materials Science, Physics +17