Concepedia

Highly stable ITO/Zn<sub>2</sub>TiO<sub>4</sub>/Pt resistive random access memory and its application in two-bit-per-cell

Shi-Xiang Chen, Sheng-Po Chang, Sheng-Po Chang, Wei-Kang Hsieh, Chih‐Chien Lin

RSC Advances · 2018 · 17 citations · 31 references

Open access

Abstract

We discuss the fabrication procedure and device characteristics of ITO/Zn<sub>2</sub>TiO<sub>4</sub>/Pt resistive random-access memory (RRAM) at room temperature.

References

31

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

Ugo Russo, Daniele Ielmini, C. Cagli et al. · IEEE Transactions on Electron Devices · 2009 · 358 citations

Engineering, Electrical Engineering, Materials Science +17

Developments in nanocrystal memory

Ting-Chang Chang, Fu-Yen Jian, Shih-Cheng Chen et al. · Materials Today · 2011 · 304 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO

Guang Chen, Cheng Song, Chao Chen et al. · Advanced Materials · 2012 · 270 citations

Natural Sciences, Materials Science, Physics +17

Low‐Fired (Zn,Mg)TiO3 Microwave Dielectrics

Hyo Tae Kim, Sahn Nahm, Jae Dong Byun et al. · Journal of the American Ceramic Society · 1999 · 203 citations

Natural Sciences, Materials Engineering, Materials Science +17

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

Jong Yeog Son, Young‐Han Shin, Hyungjun Kim et al. · ACS Nano · 2010 · 181 citations

Natural Sciences, Materials Engineering, Materials Science +14