Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface

Memristive devices for computing

J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart · Nature Nanotechnology · 2012 · 3.8K citations

Engineering, Computer Engineering, Electrical Engineering +11

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

S. Parkin, Christian Kaiser, Alex Panchula et al. · Nature Materials · 2004 · 3.3K citations

Natural Sciences, Materials Science, Physics +13

Resistive switching in transition metal oxides

Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Metal–Oxide RRAM

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations

Engineering, Materials Engineering, Materials Science +15

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

Engineering, Materials Engineering, Materials Science +14